may 2011 FDP085N10A_f102 n-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation FDP085N10A_f102 rev. a www.fairchildsemi.com 1 mosfet maximum ratings t c = 25 o c unless otherwise noted thermal characteristics symbol parameter ratings units v dss drain to source voltage 100 v v gss gate to source voltage 20 v i d drain current -continuous (t c = 25 o c) 96 a -continuous (t c = 100 o c) 68 i dm drain current - pulsed (note 1) 384 a e as single pulsed avalanche energy (note 2) 269 mj dv/dt peak diode recovery dv/dt (note 3) 6.0 v/ns p d power dissipation (t c = 25 o c) 188 w - derate above 25 o c1.25w/ o c t j , t stg operating and storage temperature range -55 to +175 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter ratings units r jc thermal resistance, junction to case 0.8 o c/w r ja thermal resistance, junction to ambient 62.5 FDP085N10A_f102 n-channel powertrench ? mosfet 100v, 96a, 8.5m features ?r ds(on) = 7.35m ( typ.)@ v gs = 10v, i d = 96a ? fast switching speed ? low gate charge ? high performance trench tech nology for extremely low r ds(on) ? high power and current handling capability ?rohs compliant general description this n-channel mosfet is produced using fairchild semiconductor?s advance powert rench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. application ? dc to dc converters ? synchronous rectification for telecommunication psu ? battery charger ? ac motor drives and uninterruptible power supplies ? off-line ups g s d to-220 g s d
FDP085N10A_f102 n-channel powertrench ? mosfet FDP085N10A_f102 rev. a www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FDP085N10A FDP085N10A_f102 to-220 - - 50 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v,t c = 25 o c 100 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c - 0.07 - v/ o c i dss zero gate voltage drain current v ds = 80v, v gs = 0v - - 1 a v ds = 80v, t c = 150 o c - - 500 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a2.0-4.0v r ds(on) static drain to source on resistance v gs = 10v, i d = 96a - 7.35 8.5 m g fs forward transconductance v ds = 10v, i d = 96a (note 4) -72-s c iss input capacitance v ds = 50v, v gs = 0v f = 1mhz - 2025 2695 pf c oss output capacitance - 468 620 pf c rss reverse transfer capacitance - 20 - pf c oss (er) engry releted output capacitance v ds = 50v, v gs = 0v - 752 - pf q g(tot) total gate charge at 10v v gs = 10v, v ds = 50v i d = 96a (note 4, 5) -3140nc q gs gate to source gate charge - 9.7 - nc q gs2 gate charge threshoid to plateau - 5.0 - nc q gd gate to drain ?miller? charge - 7.5 - nc esr equivalent series resistance (g-s) drain open, f = 1mhz - 0.97 - t d(on) turn-on delay time v dd = 50v, i d = 96a v gs = 10v, r gen = 4.7 (note 4, 5) -1846ns t r turn-on rise time - 22 54 ns t d(off) turn-off delay time - 29 68 ns t f turn-off fall time - 8 26 ns i s maximum continuous drain to source diode forward current - - 96 a i sm maximum pulsed drain to source diode forward current - - 384 a v sd drain to source diode forward voltage v gs = 0v, i sd = 96a - - 1.3 v t rr reverse recovery time v dd = 50v,v gs = 0v, i sd = 96a di f /dt = 100a/ s (note 4) -59-ns q rr reverse recovery charge - 80 - nc notes: 1. repetitive rating: pulse width li mited by maximum junction temperature 2. l = 3 mh, i as = 13.4 a, r g = 25 , starting t j = 25 c 3. i sd 96 a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, dual cycle 2% 5. essentially independent of operating temperature typical characteristics
FDP085N10A_f102 n-channel powertrench ? mosfet FDP085N10A_f102 rev. a www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 5 5 10 100 500 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 15.0v 10.0v 8.0v 6.5v 6.0v 5.5v 5.0v 234567 1 10 100 300 -55 o c 175 o c *notes: 1. v ds = 10v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0 100 200 300 400 4 8 12 16 18 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ m ] , drain-source on-resistance i d , drain current [a] 0.3 0.6 0.9 1.2 1.5 1 10 100 500 *notes: 1. v gs = 0v 2. 250 s pulse test 175 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0.1 1 10 100 10 100 1000 10000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0 7 14 21 28 35 0 2 4 6 8 10 *note: i d = 96a v ds = 20v v ds = 50v v ds = 80v v gs , gate-source voltage [v] q g , total gate charge [nc]
FDP085N10A_f102 n-channel powertrench ? mosfet FDP085N10A_f102 rev. a www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case tempe rature figure 11. eoss vs. drain to soure voltage figure 12. unclamped inductive s w i t c h i n g c a p a b i l i t y -80 -40 0 40 80 120 160 200 0.92 0.96 1.00 1.04 1.08 1.12 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -80 -40 0 40 80 120 160 200 0.5 1.0 1.5 2.0 2.5 *notes: 1. v gs = 10v 2. i d = 96a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 25 50 75 100 125 150 175 0 20 40 60 80 100 r jc = 0.8 o c/w v gs = 10v i d , drain current [a] t c , case temperature [ o c ] 1 10 100 200 0.1 1 10 100 1000 10 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse dc 0 20406080100 0.0 0.5 1.0 1.5 2.0 2.5 e oss , [ j ] v ds , drain to source voltage [ v ] 0.01 0.1 1 10 100 300 1 10 30 if r = 0 t av = (l) ( i as ) / ( 1.3*rated bv dss -v dd ) if r = 0 t av = (l/r)in [( i as *r ) / ( 1.3*rated bv dss -v dd ) +1 ] starting t j = 25 o c starting t j = 150 o c i as , avalanche current (a) t av , time in avalanche (ms)
FDP085N10A_f102 n-channel powertrench ? mosfet FDP085N10A_f102 rev. a www.fairchildsemi.com 5 typical performance characteristics (continued) figure 13 . transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 1 0.005 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.8 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2
FDP085N10A_f102 n-channel powertrench ? mosfet FDP085N10A_f102 rev. a www.fairchildsemi.com 6 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FDP085N10A_f102 n-channel powertrench ? mosfet FDP085N10A_f102 rev. a www.fairchildsemi.com 7 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FDP085N10A_f102 n-channel powertrench ? mosfet FDP085N10A_f102 rev. a www.fairchildsemi.com 8 package dimensions to-220
FDP085N10A_f102 n-channel powertrench ? mosfet FDP085N10A_f102 rev. a www.fairchildsemi.com 9 anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy . fairchild?s anti-counterfeiti ng policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in the industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts experie nce many problems such as lo ss of brand reputation, substa ndard performance, failed application, and increased cost of product ion and manufacturing delays. fairchild is ta king strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairch ild strongly encourages customers to purchas e fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by coun try on our web page cited above. products custom ers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fa irchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our cust omers to do their part in stopping this practice by buying direct or from authorized distributors. ? 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unifet? vcx? visualmax? xs? tm ? tm tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final spec ifications. fairchild semiconduc tor reserves the right to make changes at any time withou t notice to improve the design. obsolete not in production datasheet contains specif ications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. rev. i54
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